Fadhil, Farid Munawwar Amir and Aman, Mohamad Amirul Hairol and Ahmad Noorden, Ahmad Fakhrurrazi
(2025)
Determining optimal dopant concentration in hole blocking layer in aluminium gallium nitride based deep-ultraviolet light emitting diode.
In: 2nd International Science, Engineering and Technology Colloquium, 9th July 2025, Universiti Teknologi MARA, Perak Branch Tapah Campus.
Abstract
Dopant concentration of layers plays a critical role in enhancing deep-ultraviolet light emitting diode (DUV-LED). The hole blocking layer (HBL) has been modified to have various dopant concentration to find theoptimal concentration. The performance of high concentration, 1 x 1019, is best with internal quantum efficiency (IQE) ~0.5% which is more than 200% higher compared to lower concentrations.
Item Details
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Creators: | Creators Email / ID Num. Fadhil, Farid Munawwar Amir UNSPECIFIED Aman, Mohamad Amirul Hairol UNSPECIFIED Ahmad Noorden, Ahmad Fakhrurrazi fakhrurrazi@iium.edu.my |
| Subjects: | Q Science > QC Physics > Electricity and magnetism T Technology > TK Electrical engineering. Electronics. Nuclear engineering > Metal oxide semiconductors |
| Divisions: | Universiti Teknologi MARA, Perak > Tapah Campus > Faculty of Applied Sciences |
| Journal or Publication Title: | 2nd International Science, Engineering and Technology Colloquium (ISETC 2025) |
| Event Title: | 2nd International Science, Engineering and Technology Colloquium |
| Event Dates: | 9th July 2025 |
| Page Range: | pp. 257-258 |
| Keywords: | DUV-LED, HBL, Concentration, Radiative recombination, IQE |
| Date: | September 2025 |
| URI: | https://ir.uitm.edu.my/id/eprint/141893 |
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