Comparative analysis of carrier concentration and radiative recombination in algan-based deep ultraviolet leds with varying quantum well thicknesses

This study explores the influence of quantum well (QW) and quantum barrier (QB) thickness on carrier concentration and radiative recombination in AlGaN-based deep ultraviolet light-emitting diodes (DUV-LEDs). The main objective is to analyze the carrier transport behavior and recombination dynamics to determine the most efficient QW/QB configuration. Using the 1D-DDCC simulation software, three configurations LED A (QW: 1 nm, QB: 3 nm), LED D (QW: 10 nm, QB: 3 nm), and LED G (QW: 20 nm, QB: 3 nm) were analyzed. Results show that LED A exhibited the most intense and frequent radiative recombination due to strong carrier confinement, albeit with leakage from the narrow QB. LED D displayed optimal balance, achieving the highest peak internal quantum efficiency (IQE) due to enhanced carrier overlap and moderate confinement. In contrast, LED G had broader carrier profiles with reduced recombination efficiency. The findings affirm that precise control of QW/QB ratios is critical to maximizing radiative recombination and overall DUV-LED efficiency (Ishii et al., 2024; Alp et al., 2023).