Band-engineering analysis for high carrier confinement of aluminium gallium nitride-based deepultraviolet light-emitting diode

This research focuses on the numerical design and simulation of Aluminium Gallium Nitride (AlGaN)-based deep-ultraviolet light-emitting diodes (DUV-LEDs) using a multiple quantum well (MQW) structure. Five DUV-LED models were developed with varying aluminium (Al) compositions in the quantum barrier (QB) layers to investigate their effects on carrier confinement and device performance. The efficiency droop commonly observed in DUV-LEDs is often attributed to factors such as strong polarization fields, electron leakage, and poor hole injection. The analysis demonstrates that optimizing the Al content in the barrier layers significantly improves carrier confinement, reduces polarization-induced electric fields, and enhances the radiative recombination rate. These improvements are critical for achieving higher internal quantum efficiency (IQE) in AlGaN-based DUVLEDs.