Properties of N-type amorphous carbon thin film at different deposition temperature for carbon based solar sell application

The purpose of this study is to determine the suitability of amorphous carbon for the carbon based solar cell application. The amorphous carbon has the advantages which is tuneable band gap from O.OeV to 5.5eV. The amorphous carbon (a-C) has been deposited onto the quartz substrate using chemical vapour deposition (CVD) technique at different temperature from 600°C-750°C with 50°C interval. The a-C has been doped with nitrogen gas (N2) as the N-type dopant and used camphor (C10H 160) in liquid form as natural precursor. The quartz were chosen because it is similar like glass which is see through but it can overcome high temperature rather than the glass. The effect of different deposition temperature have given different electrical properties of nitrogen doped amorphous carbon (a-C: N) by using the solar simulator system which is the conductivity of the thin film. As for the optical properties it has been investigated by a Perkin Elmer LAMBDA 750 UV-vis-NIR spectroscope. In the optical properties, there are transmittance spectra and absorption coefficient which are one of the parameter that will be measured to determine the best sample. The surface morphology of a-C: N also has been observed by using the Atomic Force Microscopy (AFM) which is the roughness of the film and Field Emission Scanning Electron Microscope (FESEM). It seems the higher the temperature, the sp2 carbon bonding increases. The increase of sp2 content will result in smaller band gap or zero band gap. The result shows the largest band gap were sample at temperature of 600°C. While for the higher temperature the band gap became smaller and reached zero band gap.