Numerical simulation of emitter and base doping effects in silicon solar cells using a one-dimensional model

Doping concentration plays a crucial role in determining the electrical and photovoltaic performance of crystalline silicon solar cells. However, the optimum combination of emitter and base doping remains debated due to trade-offs between conductivity, recombination, and efficiency. In this study, one-dimensional simulations using PC1D were carried out to systematically vary the emitter and base doping concentrations across realistic ranges. The results show that the highest efficiency of 13.5% is achieved with an emitter doping concentration of 1x1018 cm-3 and base doping concentration of 3-4 x 1019 cm-3. This work highlights how balancing doping levels between emitter and base layers can mitigate recombination losses while maintaining conductivity, providing design guidance for optimizing silicon solar cell efficiency.