Fabrication and characterization of zinc oxide thin film at different deposition temperature by thermal chemical vapor deposition

The Zinc oxide (ZnO) thin films were deposited on the silicon substrate by thermal chemical vapor deposition (CVD). The deposition temperatures were varied from 400°C to 600°C. This present work aims to study the affect of deposition temperature on the structural, surface morphology and electrical properties. In general, the preparation conditions of ZnO thin films by a thermal CVD can strongly affect the surface morphology and electrical properties of the ZnO thin films. The characterization consists of two parts which is the physical properties and electrical properties due to different deposition temperature. The physical properties of the ZnO thin film has been studied using the Scanning Electron Microscope (SEM). The structural morphology from SEM showed the relationship between deposition temperatures to the crystal structure. For the electrical properties, the IV characteristic has been studied using I-V probe station. I-V characteristic showed that the resistivity decreased with higher deposition temperature up to 600°C.