Simulation on the effect of n-layer thin film thickness on efficiency of silicon-based solar cell using silvaco TCAD tools: article / Kamaruzzaman Mat Rani

Types of materials uses and solar cell structures affect the efficiency of solar cell. The effect of n-layer thin film thickness on efficiency of the solar cell was investigated by using Silvaco physically-based device simulator, ATHENA and ATLAS to model the effects of nlayer thin film thickness on solar cell output characteristics. Increase the n-layer thin film thickness will increase the short circuit current, spectral response as well the efficiency of solar cell. The n-layer of solar cell should be thin enough to increase the life time of minority carrier. The resulting output characteristics of the virtual solar cell, illuminated with a simulated Air Mass Zero (AM0) solar spectrum, were compared to published experimental measurements for silicon-based solar cells of the same dimensions. It is found that the efficiency of virtual silicon solar cell is within the efficiency range of published experimental which is from 15% to 24%. The simulation result shows that n-GaAs/p-Si solar cell has performed the highest efficiency with 15.87% at the thickness of n-layer is 0.5µm. The result of this research has proven that the use of silicon as solar cell substrate has achieved high efficiency energy conversion.