Simulation on the effect of n-layer thin film thickness on efficiency of silicon-based solar cell using silvaco TCAD tools / Kamaruzzaman Mat Rani

This report presents the “Simulation on the Effect of N-Layer Thin Film Thickness on Silicon-Based Solar Cell” in order to obtain the optimum conversion efficiency of solar cell when a different material types on n-layer thin film was used. This report establishes a novel method in which to use Silvaco's physically-based device simulator, Athena and Atlas to model the effects of n-layer thin film thickness on solar cell output characteristics. A virtual model representing a single junction silicon solar cell with was created in Atlas. The resulting output characteristics of the virtual solar cell, illuminated with a simulated Air Mass Zero (AM0) solar spectrum, were compared to published experimental measurements for Silicon-based solar cells of the same dimensions. The virtual solar cell demonstrated a good correlation between the measured and virtual solar cell output characteristics and accurate representation of the spectral response. Complete Athena and Atlas programs are included in appendices. This report has focused on the use of Silicon as solar cell substrate with different variations on n-layer thin film thickness in order to achieve high efficiency energy conversion with low production cost. The findings of this project show that n-GaAs/p-Si solar cell has performed the highest efficiency with 15.87% at the thickness of n-layer is 0.5µm. The n-layer of solar cell should be thin enough to increase the life time of minority carrier. Hence the optimum nlayer thin film thickness of 0.5µm has increased the short circuit current, spectral response as well the efficiency of solar cell. The result of this research has proven that Gallium Arsenic (GaAs) is the best material to be n-layer for p-n junction solar cell with Silicon substrate that has achieved high efficiency energy conversion.