Memristive behavior dependence on postdeposition annealing process of spin coating TIO2 thin film / Mohd Firdaus Mohamed Soder

This project is on the fabrication and electrical characteristic of memristive device with titanium dioxide (TiO2) as an active layer on two different substrates which are indium tin oxide (ITO) and glass. The memristive device was prepared by spin coating method and deposition annealing process. This method shows that the influence of physical morphologies and to investigate on the memristive behavior of titanium dioxide (TiO2) thin film. The spin coating time and temperature has been varied in this work. The time was varied for 20 min, 40 min and 1 hour while the temperature was 2500C, 3500C, and 4500C. Current–voltage (I-V) curves of the samples were taken from the voltage loop ranging 0V to -5V, -5V to 5V then back to 0V and also from -5V to 5V then back to -5V to show the bias dependent switching characteristics that equivalent the electrical behavior reported for memristor. All the memristive device thickness has been taken using surface morphology method.