The electrical properties of zinc oxide-graphene thin film in phase change memory / Nabilah Abdul Wahid

ZnO and Graphene, both have high thermal conductivity which are suitable to become a heater layer in Phase Change Memory. The function of the heater layer is to heat the phase change material little by little. This experiment investigates the electrical properties of ZnO-Graphene thin film that has been deposited on substrate by using spin coating technique. The samples were annealed at different temperature. The surface morphology, electrical properties and thickness of the ZnO-Graphene thin film was characterized by using Field Emission Scanning Electron Microscope (FESEM), I-V measurement and Surface Profiler. The thickness of the thin film decrease as the temperature increase. The I-V measurement results shows that the current flow on the sample that was annealed at 250°C is the highest compared to the samples that were annealed at 100°C, 150°C and 250°C.