Schottky behavior of novel synthesized aligned zinc oxide nanorod arrays and aligned carbon nanotube arrays for mesfet device / Salina Muhamad

Muhamad, Salina (2012) Schottky behavior of novel synthesized aligned zinc oxide nanorod arrays and aligned carbon nanotube arrays for mesfet device / Salina Muhamad. In: The Doctoral Research Abstracts. IPSis Biannual Publication, 2 (2). Institute of Graduate Studies, UiTM, Shah Alam.

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Abstract

This study is carried out to introduce new active layers in a Schottky diode for a metal-semiconductor field effect transistor (MESFET) device structure, which are novel aligned zinc oxide (ZnO) nanorod arrays and aligned carbon nanotubes (CNT) arrays. Both nanomaterials are successfully synthesized using the Chemical Bath Deposition (CBD) and Chemical Vapor Deposition (CVD) methods, respectively, which in nanoscale, exhibit 1-dimensional structure and quantum confinement effects that lead to better properties. Prior to the synthesis process, the novel seed layer, which is the Mg0.3Zn0.7O thin film, is introduced.

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Item Type: Book Section
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Muhamad, Salina
UNSPECIFIED
Subjects: L Education > LB Theory and practice of education > Higher Education > Dissertations, Academic. Preparation of theses > Malaysia
Divisions: Universiti Teknologi MARA, Shah Alam > Institut Pengajian Siswazah (IPSis) : Institute of Graduate Studies (IGS)
Series Name: IPSis Biannual Publication
Volume: 2
Number: 2
Item ID: 19150
Uncontrolled Keywords: Abstract; Abstract of thesis; Newsletter; Research information; Doctoral graduates; IPSis; IGS; UiTM; Nanotube
URI: https://ir.uitm.edu.my/id/eprint/19150

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19150

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