Preparation and characterizations of oxidized nanostructured porous silicon / Noorshafarina Ishak

The oxidized nanostructured porous silicon were produced from thermal oxidation of porous silicon sample which first prepared by electrochemical anodization using Teflon cell at current density, J = 20 mA/cm2. The etching time was the parameter for the preparation of porous silicon and the oxidation time was kept constant for the preparation of oxidized porous silicon. It is revealed that lowest etching time for producing porous silicon is at 6 minutes and maximum oxidation level for oxidized porous silicon is at sample of time etching 10 minutes. The characterizations are using Photoluminescence Spectroscopy, Thickness Profiler, Energy Dispersive Analysis by X-Ray, Fourier Transform Infrared and also Field Emission Scanning Electron Microscopy.